SiC Crystal Growth Automation.

SiC Crystal Growth Automation.

SiC Crystal Growth machines.

Semiconductor devices technology exploits the physical properties of Silicon Carbide – SiC, which leads to a growth in demand. Manufacturers must face the need to rapidly expand their production to unprecedented levels. Within this framework, it is known that automation plays a critical role.

Osai provides technology products able to meet the challenges: The solutions are tailored to provide SiC manufacturers with solutions that can be adapted to the necessary technical specifications with the highest level of precision and reliability, to ensure the stability and repeatability of the process.

Automatic Silicon Carbide (SiC)
Seed Preparation System

Automatic Silicon Carbide (SiC)
Crucible Opening System

Automatic Silicon Carbide (SiC)
Ingot Characterization System