Auto Ingot Characterization is an automated cell, designed to perform the characterization of the raw SiC crystal and the grinded SiC crystal.

Auto Ingot Characterization system is the standard Osai solution for the characterization of SiC crystals with 3D inspection for top, side, and bottom quality evaluation. The system is using two different wavelengths: red light for geometries and UV for atomic position.

SiC production process is time-consuming, and growing a single crystal ingot can include over 300 different processing steps, and last from six to eight weeks. To produce the required large quantities of ultra-pure SiC crystals, specialized growing systems are often grouped in sets of tens or hundreds units. During this process, the wafer substrate must withstand the extreme conditions of production, as failure at any stage would result in a loss of time and money.

Osai systems are therefore mandatoty to ensure the top class level of quality in every process step.